 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUT90 HIGH POWER NPN SILICON TRANSISTOR s s s s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS LOW COLLECTOR EMITTER SATURATION APPLICATIONS UNINTERRUPTABLE POWER SUPPLY s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 (version "S") DESCRIPTION The BUT90 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = -1.5 V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Total Power Dissipation at T case 25 C o Value 200 125 10 50 120 12 32 250 -65 to 200 200 Unit V V V A A A A W o o Storage Temperature Junction Temperature C C April 1997 1/4 BUT90 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 10 ) Collector Cut-off Current Emitter Cut-off Current (I C = 0) Test Conditions V CE = V CEV o V CE = V CEV Tc = 100 C V CE = V CEV V BE = -1.5V V CE = V CEV V BE = -1.5V Tc = 100 o C V EB = 7 V I C = 0.2 A I E = 50 mA IC IC IC IC IC IC IC IC = = = = = = = = 35 70 35 70 35 70 35 70 A A A A A A A A IB IB IB IB IB IB IB IB = = = = = = = = 1.75 A 7A Tc = 100 o C 1.75 A 7A Tc = 100 o C 1.75 A 7A Tc = 100 o C 1.75 A o 7A Tc = 100 C L = 25 mH 125 10 0.55 0.8 0.75 1.2 1 1.45 1 1.65 0.9 0.9 1.2 1.5 1.3 1.8 1.4 2 Min. Typ. Max. 0.4 4 0.2 2 1 Unit mA mA mA mA mA V V V V V V V V V V V CEO(sus) Collector-Emitter Sustaining Voltage V EB0 V CE(sat) Emitter-Base Voltage (IC = 0) Collector-Emitter Saturation Voltage V BE(sat) Base-Emitter Saturation Voltage RESISTIVE LOAD Symbol tr ts tf tr ts tf Parameter Rise Time Storage Time Fall Time Rise Time Storage Time Fall Time Test Conditions V CC = 100 V I B1 = - I B2 = 7 A V CC = 100 V I B1 = - I B2 = 7 A Tc = 100 o C I C = 70 A t p = 30 s I C = 70 A t p = 30 s Min. Typ. 0.8 0.9 0.2 1.1 1.2 0.3 Max. 1.2 1.5 0.4 1.6 2 0.6 Unit s s s s s s INDUCTIVE LOAD Symbol ts tf ts tf Parameter Storage Time Fall Time Storage Time Fall Time Test Conditions V CC = 100 V I C = 70 A L C = 70 H V CC = 100 V I C = 70 A L C = 70 H V Clamp = 125 V I B1 = - I B2 = 7 A V Clamp = 125 V I B1 = - I B2 = 7 A Tc = 100 o C Min. Typ. 1.25 0.16 1.5 0.25 Max. 2 0.3 2.2 0.5 Unit ms s s s * Pulsed : Pulse duration = 300 s, duty cycle = 2% 2/4 BUT90 TO-3 (version S) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003O 3/4 E BUT90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
Price & Availability of BUT90
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |